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ZTX601STZ

ZTX601STZ

ZTX601STZ

Diodes Incorporated

ZTX601STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZTX601STZ Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~200°C TJ
Packaging Tape & Box (TB)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 160V
Max Power Dissipation 1W
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating 1A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZTX601
Pin Count 3
Reference Standard CECC
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 500mA 10V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 10mA, 1A
Collector Emitter Breakdown Voltage 160V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 1.1V
Frequency - Transition 250MHz
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 10V
Continuous Collector Current 1A
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.397797 $0.397797
10 $0.375280 $3.7528
100 $0.354038 $35.4038
500 $0.333998 $166.999
1000 $0.315092 $315.092
ZTX601STZ Product Details

ZTX601STZ Overview


DC current gain in this device equals 2000 @ 500mA 10V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 10mA, 1A.For high efficiency, the continuous collector voltage must be kept at 1A.An emitter's base voltage can be kept at 10V to gain high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.The maximum collector current is 1A volts.

ZTX601STZ Features


the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.2V @ 10mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 1A
a transition frequency of 150MHz

ZTX601STZ Applications


There are a lot of Diodes Incorporated ZTX601STZ applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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