ZTX601STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX601STZ Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3, Formed Leads
Number of Pins
3
Weight
453.59237mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Tape & Box (TB)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
160V
Max Power Dissipation
1W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
1A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZTX601
Pin Count
3
Reference Standard
CECC
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
160V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 500mA 10V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 10mA, 1A
Collector Emitter Breakdown Voltage
160V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
1.1V
Frequency - Transition
250MHz
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
10V
Continuous Collector Current
1A
Height
4.01mm
Length
4.77mm
Width
2.41mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.397797
$0.397797
10
$0.375280
$3.7528
100
$0.354038
$35.4038
500
$0.333998
$166.999
1000
$0.315092
$315.092
ZTX601STZ Product Details
ZTX601STZ Overview
DC current gain in this device equals 2000 @ 500mA 10V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 10mA, 1A.For high efficiency, the continuous collector voltage must be kept at 1A.An emitter's base voltage can be kept at 10V to gain high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.The maximum collector current is 1A volts.
ZTX601STZ Features
the DC current gain for this device is 2000 @ 500mA 10V a collector emitter saturation voltage of 1.1V the vce saturation(Max) is 1.2V @ 10mA, 1A the emitter base voltage is kept at 10V the current rating of this device is 1A a transition frequency of 150MHz
ZTX601STZ Applications
There are a lot of Diodes Incorporated ZTX601STZ applications of single BJT transistors.