ZTX614STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZTX614STZ Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
E-Line-3, Formed Leads
Number of Pins
3
Weight
453.59237mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Tape & Box (TB)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
100V
Max Power Dissipation
1W
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
800mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZTX614
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 500mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.25V @ 8mA, 800mA
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
1.25V
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
10V
Continuous Collector Current
800mA
Height
4.01mm
Length
4.77mm
Width
2.41mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.133663
$0.133663
10
$0.126098
$1.26098
100
$0.118960
$11.896
500
$0.112226
$56.113
1000
$0.105874
$105.874
ZTX614STZ Product Details
ZTX614STZ Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10000 @ 500mA 5V.A collector emitter saturation voltage of 1.25V allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.25V @ 8mA, 800mA.Continuous collector voltages of 800mA should be maintained to achieve high efficiency.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 800mA.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
ZTX614STZ Features
the DC current gain for this device is 10000 @ 500mA 5V a collector emitter saturation voltage of 1.25V the vce saturation(Max) is 1.25V @ 8mA, 800mA the emitter base voltage is kept at 10V the current rating of this device is 800mA
ZTX614STZ Applications
There are a lot of Diodes Incorporated ZTX614STZ applications of single BJT transistors.