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PBHV8140Z,115

  • PBHV8140Z,115
  • PBHV8140Z,115

PBHV8140Z,115

PBHV8140Z,115

Nexperia USA Inc.

PBHV8140Z,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBHV8140Z,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Max Power Dissipation 1.45W
Terminal Position DUAL
Terminal Form GULL WING
Frequency 25MHz
Base Part Number PBHV8140
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 1.45W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 25MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 500mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 200mA, 1A
Collector Emitter Breakdown Voltage 400V
Transition Frequency 25MHz
Max Breakdown Voltage 400V
Collector Base Voltage (VCBO) 500V
Emitter Base Voltage (VEBO) 6V
hFE Min 10
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.689280 $0.68928
10 $0.650264 $6.50264
100 $0.613457 $61.3457
500 $0.578733 $289.3665
1000 $0.545974 $545.974
PBHV8140Z,115 Product Details

PBHV8140Z,115 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 35 @ 500mA 10V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.As a result, the part has a transition frequency of 25MHz.The breakdown input voltage is 400V volts.A maximum collector current of 1A volts can be achieved.

PBHV8140Z,115 Features


the DC current gain for this device is 35 @ 500mA 10V
the vce saturation(Max) is 250mV @ 200mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 25MHz

PBHV8140Z,115 Applications


There are a lot of Nexperia USA Inc. PBHV8140Z,115 applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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