ZTX968STZ Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 500mA 1V DC current gain.A collector emitter saturation voltage of -220mV ensures maximum design flexibility.When VCE saturation is 300mV @ 200mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Maintaining the continuous collector voltage at -4.5A is essential for high efficiency.With the emitter base voltage set at -6V, an efficient operation can be achieved.This device has a current rating of -4.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 85MHz.A maximum collector current of 4.5A volts can be achieved.
ZTX968STZ Features
the DC current gain for this device is 300 @ 500mA 1V
a collector emitter saturation voltage of -220mV
the vce saturation(Max) is 300mV @ 200mA, 5A
the emitter base voltage is kept at -6V
the current rating of this device is -4.5A
a transition frequency of 85MHz
ZTX968STZ Applications
There are a lot of Diodes Incorporated ZTX968STZ applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting