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ZTX968STZ

ZTX968STZ

ZTX968STZ

Diodes Incorporated

ZTX968STZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZTX968STZ Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature-55°C~200°C TJ
PackagingTape & Box (TB)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -12V
Max Power Dissipation1.2W
Terminal FormWIRE
Peak Reflow Temperature (Cel) 260
Current Rating-4.5A
Frequency 80MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZTX968
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1.2W
Power - Max 1.58W
Transistor Application SWITCHING
Gain Bandwidth Product80MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 4.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 500mA 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 200mA, 5A
Collector Emitter Breakdown Voltage12V
Transition Frequency 85MHz
Collector Emitter Saturation Voltage-220mV
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) -6V
Continuous Collector Current -4.5A
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:14450 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.701219$2.701219
10$2.548320$25.4832
100$2.404075$240.4075
500$2.267996$1133.998
1000$2.139619$2139.619

ZTX968STZ Product Details

ZTX968STZ Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 500mA 1V DC current gain.A collector emitter saturation voltage of -220mV ensures maximum design flexibility.When VCE saturation is 300mV @ 200mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Maintaining the continuous collector voltage at -4.5A is essential for high efficiency.With the emitter base voltage set at -6V, an efficient operation can be achieved.This device has a current rating of -4.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 85MHz.A maximum collector current of 4.5A volts can be achieved.

ZTX968STZ Features


the DC current gain for this device is 300 @ 500mA 1V
a collector emitter saturation voltage of -220mV
the vce saturation(Max) is 300mV @ 200mA, 5A
the emitter base voltage is kept at -6V
the current rating of this device is -4.5A
a transition frequency of 85MHz

ZTX968STZ Applications


There are a lot of Diodes Incorporated ZTX968STZ applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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