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2SC3837KT146P

2SC3837KT146P

2SC3837KT146P

ROHM Semiconductor

2SC3837KT146P datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SC3837KT146P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Contact PlatingCopper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2003
JESD-609 Code e1
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 18V
Max Power Dissipation200mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating50mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SC3837
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Transistor Application AMPLIFIER
Gain Bandwidth Product1.5 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 10mA 10V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 4mA, 20mA
Collector Emitter Breakdown Voltage20V
Transition Frequency 1500MHz
Collector Emitter Saturation Voltage500mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 3V
hFE Min 82
Continuous Collector Current 50mA
Highest Frequency Band VERY HIGH FREQUENCY B
Collector-Base Capacitance-Max 1.5pF
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:13912 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.190203$0.190203
10$0.179437$1.79437
100$0.169280$16.928
500$0.159698$79.849
1000$0.150659$150.659

2SC3837KT146P Product Details

2SC3837KT146P Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 82 @ 10mA 10V.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 4mA, 20mA.Continuous collector voltages of 50mA should be maintained to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 3V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 50mA for this device.In this part, there is a transition frequency of 1500MHz.This device can take an input voltage of 20V volts before it breaks down.When collector current reaches its maximum, it can reach 50mA volts.

2SC3837KT146P Features


the DC current gain for this device is 82 @ 10mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 4mA, 20mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 1500MHz

2SC3837KT146P Applications


There are a lot of ROHM Semiconductor 2SC3837KT146P applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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