ZXTN04120HP5TC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
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ZXTN04120HP5TC Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
PowerDI™ 5
Number of Pins
5
Supplier Device Package
PowerDI™ 5
Weight
95.991485mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.2W
Polarity
NPN
Element Configuration
Single
Power - Max
3.2W
Gain Bandwidth Product
150MHz
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
1.5V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 1A 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1mA, 1A
Collector Emitter Breakdown Voltage
120V
Voltage - Collector Emitter Breakdown (Max)
120V
Current - Collector (Ic) (Max)
1.5A
Max Breakdown Voltage
120V
Frequency - Transition
150MHz
Collector Base Voltage (VCBO)
140V
Emitter Base Voltage (VEBO)
14V
hFE Min
5000
Continuous Collector Current
1.5A
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.965710
$2.96571
10
$2.797840
$27.9784
100
$2.639472
$263.9472
500
$2.490068
$1245.034
1000
$2.349120
$2349.12
ZXTN04120HP5TC Product Details
ZXTN04120HP5TC Overview
This device has a DC current gain of 2000 @ 1A 5V, which is the ratio between the collector current and the base current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 1mA, 1A.Continuous collector voltages of 1.5A should be maintained to achieve high efficiency.With the emitter base voltage set at 14V, an efficient operation can be achieved.As a result, it can handle voltages as low as 120V volts.Single BJT transistor comes in a supplier device package of PowerDI? 5.A 120V maximal voltage - Collector Emitter Breakdown is present in the device.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
ZXTN04120HP5TC Features
the DC current gain for this device is 2000 @ 1A 5V the vce saturation(Max) is 1.5V @ 1mA, 1A the emitter base voltage is kept at 14V the supplier device package of PowerDI? 5
ZXTN04120HP5TC Applications
There are a lot of Diodes Incorporated ZXTN04120HP5TC applications of single BJT transistors.