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2SCR533P5T100

2SCR533P5T100

2SCR533P5T100

ROHM Semiconductor

2SCR533P5T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SCR533P5T100 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 500mW
Terminal Position SINGLE
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-F3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 500mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 350mV
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 50mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 50V
Transition Frequency 320MHz
Max Breakdown Voltage 50V
Frequency - Transition 320MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.096880 $0.09688
500 $0.071235 $35.6175
1000 $0.059363 $59.363
2000 $0.054461 $108.922
5000 $0.050898 $254.49
10000 $0.047347 $473.47
15000 $0.045790 $686.85
50000 $0.045025 $2251.25
2SCR533P5T100 Product Details

2SCR533P5T100 Overview


In this device, the DC current gain is 180 @ 50mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 50mA, 1A.In this part, there is a transition frequency of 320MHz.This device can take an input voltage of 50V volts before it breaks down.During maximum operation, collector current can be as low as 3A volts.

2SCR533P5T100 Features


the DC current gain for this device is 180 @ 50mA 3V
the vce saturation(Max) is 350mV @ 50mA, 1A
a transition frequency of 320MHz

2SCR533P5T100 Applications


There are a lot of ROHM Semiconductor 2SCR533P5T100 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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