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PMBT2222AMYL

PMBT2222AMYL

PMBT2222AMYL

Nexperia USA Inc.

PMBT2222AMYL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PMBT2222AMYL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 250mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 600mA
Frequency - Transition 340MHz
Pricing & Ordering
Quantity Unit Price Ext. Price
10,000 $0.03816 $0.3816
30,000 $0.03618 $1.0854
50,000 $0.03420 $1.71
100,000 $0.03083 $3.083
250,000 $0.03024 $7.56
PMBT2222AMYL Product Details

PMBT2222AMYL Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.There is a 40V maximal voltage in the device due to collector-emitter breakdown.

PMBT2222AMYL Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA

PMBT2222AMYL Applications


There are a lot of Nexperia USA Inc. PMBT2222AMYL applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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