PMBT2222AMYL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PMBT2222AMYL Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mounting Type
Surface Mount
Package / Case
SC-101, SOT-883
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
250mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
600mA
Frequency - Transition
340MHz
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10,000
$0.03816
$0.3816
30,000
$0.03618
$1.0854
50,000
$0.03420
$1.71
100,000
$0.03083
$3.083
250,000
$0.03024
$7.56
PMBT2222AMYL Product Details
PMBT2222AMYL Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.There is a 40V maximal voltage in the device due to collector-emitter breakdown.
PMBT2222AMYL Features
the DC current gain for this device is 100 @ 150mA 10V the vce saturation(Max) is 1V @ 50mA, 500mA
PMBT2222AMYL Applications
There are a lot of Nexperia USA Inc. PMBT2222AMYL applications of single BJT transistors.