MJL3281AG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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MJL3281AG Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-264AA
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
200V
Max Power Dissipation
200W
Peak Reflow Temperature (Cel)
260
Current Rating
15A
Frequency
30MHz
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200W
Case Connection
ISOLATED
Transistor Application
AMPLIFIER
Gain Bandwidth Product
30MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
200V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
75 @ 5A 5V
Current - Collector Cutoff (Max)
50μA ICBO
Vce Saturation (Max) @ Ib, Ic
3V @ 1A, 10A
Collector Emitter Breakdown Voltage
260V
Transition Frequency
30MHz
Collector Emitter Saturation Voltage
3V
Collector Base Voltage (VCBO)
230V
Emitter Base Voltage (VEBO)
7V
hFE Min
60
Height
26.4mm
Length
20.3mm
Width
5.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.57000
$3.57
25
$3.02880
$75.72
100
$2.62510
$262.51
500
$2.23470
$1117.35
1,000
$1.88469
$1.88469
MJL3281AG Product Details
MJL3281AG Overview
In this device, the DC current gain is 75 @ 5A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 3V, it allows for maximum design flexibility.When VCE saturation is 3V @ 1A, 10A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 15A.Single BJT transistor contains a transSingle BJT transistorion frequency of 30MHz.Maximum collector currents can be below 15A volts.
MJL3281AG Features
the DC current gain for this device is 75 @ 5A 5V a collector emitter saturation voltage of 3V the vce saturation(Max) is 3V @ 1A, 10A the emitter base voltage is kept at 7V the current rating of this device is 15A a transition frequency of 30MHz
MJL3281AG Applications
There are a lot of ON Semiconductor MJL3281AG applications of single BJT transistors.