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MJL3281AG

MJL3281AG

MJL3281AG

ON Semiconductor

MJL3281AG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJL3281AG Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 200V
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) 260
Current Rating 15A
Frequency 30MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Case Connection ISOLATED
Transistor Application AMPLIFIER
Gain Bandwidth Product 30MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 200V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 5A 5V
Current - Collector Cutoff (Max) 50μA ICBO
Vce Saturation (Max) @ Ib, Ic 3V @ 1A, 10A
Collector Emitter Breakdown Voltage 260V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage 3V
Collector Base Voltage (VCBO) 230V
Emitter Base Voltage (VEBO) 7V
hFE Min 60
Height 26.4mm
Length 20.3mm
Width 5.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.57000 $3.57
25 $3.02880 $75.72
100 $2.62510 $262.51
500 $2.23470 $1117.35
1,000 $1.88469 $1.88469
MJL3281AG Product Details

MJL3281AG Overview


In this device, the DC current gain is 75 @ 5A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 3V, it allows for maximum design flexibility.When VCE saturation is 3V @ 1A, 10A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 15A.Single BJT transistor contains a transSingle BJT transistorion frequency of 30MHz.Maximum collector currents can be below 15A volts.

MJL3281AG Features


the DC current gain for this device is 75 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 30MHz

MJL3281AG Applications


There are a lot of ON Semiconductor MJL3281AG applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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