TIP111G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 1A 4V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 8mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 2A.In the part, the transition frequency is 440MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 2A volts.
TIP111G Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 440MHz
TIP111G Applications
There are a lot of ON Semiconductor TIP111G applications of single BJT transistors.
- Muting
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- Interface
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- Driver
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- Inverter
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