ZXTN08400BFFTA Overview

DC current gain in this device equals 100 @ 50mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 175mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 175mV @ 100mA, 500mA.Keeping the emitter base voltage at 7V can result in a high level of efficiency.As you can see, the part has a transition frequency of 40MHz.Breakdown input voltage is 400V volts.During maximum operation, collector current can be as low as 500mA volts.

ZXTN08400BFFTA Features

the DC current gain for this device is 100 @ 50mA 5V
a collector emitter saturation voltage of 175mV
the vce saturation(Max) is 175mV @ 100mA, 500mA
the emitter base voltage is kept at 7V
a transition frequency of 40MHz

ZXTN08400BFFTA Applications

There are a lot of Diodes Incorporated ZXTN08400BFFTA applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver