2SC3906KT146R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SC3906KT146R Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
Other Transistors
Voltage - Rated DC
120V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
50mA
Frequency
140MHz
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SC3906
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
140MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
120V
Max Collector Current
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 2mA 6V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
120V
Transition Frequency
140MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
120V
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
5V
hFE Min
180
Continuous Collector Current
50mA
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.153480
$0.15348
10
$0.144792
$1.44792
100
$0.136597
$13.6597
500
$0.128865
$64.4325
1000
$0.121571
$121.571
2SC3906KT146R Product Details
2SC3906KT146R Overview
DC current gain in this device equals 180 @ 2mA 6V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 1mA, 10mA.A constant collector voltage of 50mA is necessary for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 50mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 140MHz.This device can take an input voltage of 120V volts before it breaks down.Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.
2SC3906KT146R Features
the DC current gain for this device is 180 @ 2mA 6V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 1mA, 10mA the emitter base voltage is kept at 5V the current rating of this device is 50mA a transition frequency of 140MHz
2SC3906KT146R Applications
There are a lot of ROHM Semiconductor 2SC3906KT146R applications of single BJT transistors.