PBSS4140T,235 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 500mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor can take a breakdown input voltage of 40V volts.Supplier device package TO-236AB comes with the product.Detection of Collector Emitter Breakdown at 40V maximal voltage is present.Collector current can be as low as 1A volts at its maximum.

PBSS4140T,235 Features

the DC current gain for this device is 300 @ 500mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the supplier device package of TO-236AB

PBSS4140T,235 Applications

There are a lot of Nexperia USA Inc. PBSS4140T,235 applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter