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AIHD10N60RFATMA1

AIHD10N60RFATMA1

AIHD10N60RFATMA1

Infineon Technologies

AIHD10N60RFATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

AIHD10N60RFATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 39 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Power - Max 150W
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 20A
Test Condition 400V, 10A, 26 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 10A
IGBT Type Trench Field Stop
Gate Charge 64nC
Current - Collector Pulsed (Icm) 30A
Td (on/off) @ 25°C 12ns/168ns
Switching Energy 190μJ (on), 160μJ (off)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.96390 $1.9278
AIHD10N60RFATMA1 Product Details

AIHD10N60RFATMA1 Description


AIHD10N60RFATMA1 is a type of IGBT with integrated diode in packages offering space-saving advantage, which belongs to the TRENCHSTOPTM RC-drives fast series. It is designed based on TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications.  Low switching losses can be ensured based on its optimized Eon, Eoff, and Qrr. The AIHD10N60RFATMA1 IGBT is characterized by very tight parameter distribution, a short circuit capability of 5μs, a maximum junction temperature of 175°C, and more.



AIHD10N60RFATMA1 Features


Very tight parameter distribution

Maximum junction temperature 175°C

Dynamically stress tested

Short circuit capability of 5μs



AIHD10N60RFATMA1 Applications


Small drives

Piezo injection

Automotive lighting / HID


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