AIHD10N60RFATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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AIHD10N60RFATMA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
39 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
-40°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2012
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Input Type
Standard
Power - Max
150W
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
20A
Test Condition
400V, 10A, 26 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 10A
IGBT Type
Trench Field Stop
Gate Charge
64nC
Current - Collector Pulsed (Icm)
30A
Td (on/off) @ 25°C
12ns/168ns
Switching Energy
190μJ (on), 160μJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.96390
$1.9278
AIHD10N60RFATMA1 Product Details
AIHD10N60RFATMA1 Description
AIHD10N60RFATMA1 is a type of IGBT with integrated diode in packages offering space-saving advantage, which belongs to the TRENCHSTOPTM RC-drives fast series. It is designed based on TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications. Low switching losses can be ensured based on its optimized Eon, Eoff, and Qrr. The AIHD10N60RFATMA1 IGBT is characterized by very tight parameter distribution, a short circuit capability of 5μs, a maximum junction temperature of 175°C, and more.