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NDT452AP

NDT452AP

NDT452AP

ON Semiconductor

NDT452AP datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NDT452AP Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 65mOhm
Subcategory Other Transistors
Voltage - Rated DC -30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -5A
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 3W Ta
Current 5A
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 690pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 5A
Threshold Voltage -1.6V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Dual Supply Voltage 30V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 1.6 V
Height 1.8mm
Width 6.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
4,000 $0.44629 $1.78516
8,000 $0.42398 $3.39184
12,000 $0.40804 $4.89648
NDT452AP Product Details

NDT452AP Description


The NDT452AP is a P-channel logic level enhancement mode Field-Effect Transistor using high cell density and DMOS technology. This very high-density process has been specially tailored to minimize on-state resistance and provide superior switching performance. The onsemi NDT452AP is particularly suited for low voltage applications such as notebook computer power management and DC motor control.



NDT452AP Features


  • -5A, -30V.

   -RDS(ON) = 0.065 Ω @ VGS = -10V

   -RDS(ON) = 0.1 Ω @ VGS = -4.5V

  • High-density cell design for extremely low RDS(ON)

  • High power and current handling capability in a widely used surface mount package

  • Gate Source Voltage: +20v

  • Operating and Storage Temperature Range: -65 to 150°C



NDT452AP Applications


  • Notebook computer power management 

  • DC motor control

  • Motor Drive & Control

  • Computers 

  • Computer Peripherals


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