NDT452AP datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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NDT452AP Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Resistance
65mOhm
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-5A
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Number of Channels
1
Power Dissipation-Max
3W Ta
Current
5A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3W
Case Connection
DRAIN
Turn On Delay Time
9 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
65m Ω @ 5A, 10V
Vgs(th) (Max) @ Id
2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
690pF @ 15V
Current - Continuous Drain (Id) @ 25°C
5A Ta
Gate Charge (Qg) (Max) @ Vgs
30nC @ 10V
Rise Time
20ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
19 ns
Turn-Off Delay Time
40 ns
Continuous Drain Current (ID)
5A
Threshold Voltage
-1.6V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-30V
Dual Supply Voltage
30V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
1.6 V
Height
1.8mm
Width
6.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
NDT452AP Product Details
NDT452AP Description
The NDT452AP is a P-channel logic level enhancement mode Field-Effect Transistor using high cell density and DMOS technology. This very high-density process has been specially tailored to minimize on-state resistance and provide superior switching performance. The onsemi NDT452AP is particularly suited for low voltage applications such as notebook computer power management and DC motor control.
NDT452AP Features
-5A, -30V.
-RDS(ON) = 0.065 Ω @ VGS = -10V
-RDS(ON) = 0.1 Ω @ VGS = -4.5V
High-density cell design for extremely low RDS(ON)
High power and current handling capability in a widely used surface mount package
Gate Source Voltage: +20v
Operating and Storage Temperature Range: -65 to 150°C