FQPF85N06

new-10%

Manufacturer part number:FQPF85N06

Manufacturer:ON Semiconductor

Description:N-Channel Tube 10m Ω @ 26.5A, 10V ±25V 4120pF @ 25V 112nC @ 10V TO-220-3 Full Pack

Case Package:SOT-23

Datasheet:FQPF85N06 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Factory Lead Time	4 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	2.27g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	QFET®
Published	2001
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	10mOhm
Terminal Finish	Tin (Sn)
Voltage - Rated DC	60V
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	53A
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	62W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	62W
Case Connection	ISOLATED
Turn On Delay Time	40 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10m Ω @ 26.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4120pF @ 25V
Current - Continuous Drain (Id) @ 25°C	53A Tc
Gate Charge (Qg) (Max) @ Vgs	112nC @ 10V
Rise Time	230ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	170 ns
Turn-Off Delay Time	175 ns
Continuous Drain Current (ID)	53A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	60V
Dual Supply Voltage	60V
Avalanche Energy Rating (Eas)	820 mJ
Nominal Vgs	4 V
Height	9.19mm
Length	10.16mm
Width	4.7mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free