STW56N60DM2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STW56N60DM2 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
17 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
MDmesh™ DM2
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Base Part Number
STW56N
Power Dissipation-Max
360W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
60m Ω @ 25A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4100pF @ 100V
Current - Continuous Drain (Id) @ 25°C
50A Tc
Gate Charge (Qg) (Max) @ Vgs
90nC @ 10V
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Continuous Drain Current (ID)
50A
Threshold Voltage
4V
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$11.00000
$11
30
$9.02000
$270.6
120
$8.14000
$976.8
510
$6.82000
$3478.2
STW56N60DM2 Product Details
STW56N60DM2 Description
The MDmeshTM DM2 rapid recovery diode series includes this STW56N60DM2. It features a very low recovery charge (Qrr) and time (trr), as well as a very low RDS(on), making it perfect for bridge topologies and ZVS phase-shift converters.
STW56N60DM2 Features
? Body diode with a quick recovery time
? Input capacitance and gate charge are extremely low.