BC848CWH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BC848CWH6327XTSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
250mW
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
250MHz
Base Part Number
BC848
Number of Elements
1
Element Configuration
Single
Power Dissipation
250mW
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
600mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
30V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
250MHz
Collector Emitter Saturation Voltage
600mV
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
6V
Height
800μm
Length
2mm
Width
1.25mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.244495
$0.244495
10
$0.230656
$2.30656
100
$0.217600
$21.76
500
$0.205283
$102.6415
1000
$0.193663
$193.663
BC848CWH6327XTSA1 Product Details
BC848CWH6327XTSA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 420 @ 2mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 250MHz is present in the part.A maximum collector current of 100mA volts is possible.
BC848CWH6327XTSA1 Features
the DC current gain for this device is 420 @ 2mA 5V a collector emitter saturation voltage of 600mV the vce saturation(Max) is 600mV @ 5mA, 100mA the emitter base voltage is kept at 6V a transition frequency of 250MHz
BC848CWH6327XTSA1 Applications
There are a lot of Infineon Technologies BC848CWH6327XTSA1 applications of single BJT transistors.