BC860CB5003XT datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BC860CB5003XT Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BC860
Power - Max
330mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
250MHz
RoHS Status
ROHS3 Compliant
BC860CB5003XT Product Details
BC860CB5003XT Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).The product comes in the supplier device package of SOT-23-3.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.
BC860CB5003XT Features
the DC current gain for this device is 420 @ 2mA 5V the vce saturation(Max) is 650mV @ 5mA, 100mA the supplier device package of SOT-23-3
BC860CB5003XT Applications
There are a lot of Infineon Technologies BC860CB5003XT applications of single BJT transistors.