PBSS4360XX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS4360XX Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-243AA
Operating Temperature
-55°C~150°C TA
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Pin Count
3
Power - Max
1.35W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
75 @ 3A 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
400mV @ 3A, 300mA
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
3A
Frequency - Transition
75MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.10600
$0.106
2,000
$0.09540
$0.1908
5,000
$0.09010
$0.4505
10,000
$0.08215
$0.8215
25,000
$0.07685
$1.92125
50,000
$0.07420
$3.71
PBSS4360XX Product Details
PBSS4360XX Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 75 @ 3A 5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
PBSS4360XX Features
the DC current gain for this device is 75 @ 3A 5V the vce saturation(Max) is 400mV @ 3A, 300mA
PBSS4360XX Applications
There are a lot of Nexperia USA Inc. PBSS4360XX applications of single BJT transistors.