PBSS4360XX

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Manufacturer part number:PBSS4360XX

Manufacturer:Nexperia USA Inc.

Description:PBSS4360XX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

Case Package:SOT-23

Datasheet:PBSS4360XX Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mounting Type	Surface Mount
Package / Case	TO-243AA
Operating Temperature	-55°C~150°C TA
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Pin Count	3
Power - Max	1.35W
Transistor Type	NPN
DC Current Gain (hFE) (Min) @ Ic, Vce	75 @ 3A 5V
Current - Collector Cutoff (Max)	100nA
Vce Saturation (Max) @ Ib, Ic	400mV @ 3A, 300mA
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	3A
Frequency - Transition	75MHz
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price

PBSS4360XX Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 75 @ 3A 5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.