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PBSS4360XX

PBSS4360XX

PBSS4360XX

Nexperia USA Inc.

PBSS4360XX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS4360XX Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature -55°C~150°C TA
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Pin Count 3
Power - Max 1.35W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 3A 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 400mV @ 3A, 300mA
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 3A
Frequency - Transition 75MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.10600 $0.106
2,000 $0.09540 $0.1908
5,000 $0.09010 $0.4505
10,000 $0.08215 $0.8215
25,000 $0.07685 $1.92125
50,000 $0.07420 $3.71
PBSS4360XX Product Details

PBSS4360XX Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 75 @ 3A 5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

PBSS4360XX Features


the DC current gain for this device is 75 @ 3A 5V
the vce saturation(Max) is 400mV @ 3A, 300mA

PBSS4360XX Applications


There are a lot of Nexperia USA Inc. PBSS4360XX applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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