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2PB710ASL,235

  • 2PB710ASL,235
  • 2PB710ASL,235

2PB710ASL,235

2PB710ASL,235

Nexperia USA Inc.

2PB710ASL,235 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

2PB710ASL,235 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 140MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2PB710A
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 250mW
Transistor Application SWITCHING
Gain Bandwidth Product 140MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 170 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 30mA, 300mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 140MHz
Collector Emitter Saturation Voltage -600mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.277574 $0.277574
10 $0.261863 $2.61863
100 $0.247040 $24.704
500 $0.233057 $116.5285
1000 $0.219864 $219.864
2PB710ASL,235 Product Details

2PB710ASL,235 Overview


This device has a DC current gain of 170 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -600mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 30mA, 300mA.Emitter base voltages of 5V can achieve high levels of efficiency.In this part, there is a transition frequency of 140MHz.During maximum operation, collector current can be as low as 500mA volts.

2PB710ASL,235 Features


the DC current gain for this device is 170 @ 150mA 10V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
a transition frequency of 140MHz

2PB710ASL,235 Applications


There are a lot of Nexperia USA Inc. 2PB710ASL,235 applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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