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PBSS302PX,115

PBSS302PX,115

PBSS302PX,115

Nexperia USA Inc.

PBSS302PX,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS302PX,115 Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 2.1W
Terminal Form FLAT
Frequency 130MHz
Base Part Number PBSS302P
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 600mW
Case Connection COLLECTOR
Power - Max 2.1W
Transistor Application SWITCHING
Gain Bandwidth Product 130MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 5.1A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 230mV @ 255mA, 5.1A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 130MHz
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 5V
hFE Min 250
Turn On Time-Max (ton) 65ns
Height 6.35mm
Length 12.7mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.173394 $0.173394
10 $0.163579 $1.63579
100 $0.154320 $15.432
500 $0.145585 $72.7925
1000 $0.137344 $137.344
PBSS302PX,115 Product Details

PBSS302PX,115 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 230mV @ 255mA, 5.1A.Emitter base voltages of 5V can achieve high levels of efficiency.There is a transition frequency of 130MHz in the part.An input voltage of 20V volts is the breakdown voltage.The maximum collector current is 5.1A volts.

PBSS302PX,115 Features


the DC current gain for this device is 200 @ 2A 2V
the vce saturation(Max) is 230mV @ 255mA, 5.1A
the emitter base voltage is kept at 5V
a transition frequency of 130MHz

PBSS302PX,115 Applications


There are a lot of Nexperia USA Inc. PBSS302PX,115 applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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