PBSS302PX,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS302PX,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
2.1W
Terminal Form
FLAT
Frequency
130MHz
Base Part Number
PBSS302P
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
600mW
Case Connection
COLLECTOR
Power - Max
2.1W
Transistor Application
SWITCHING
Gain Bandwidth Product
130MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
5.1A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
230mV @ 255mA, 5.1A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
130MHz
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
20V
Emitter Base Voltage (VEBO)
5V
hFE Min
250
Turn On Time-Max (ton)
65ns
Height
6.35mm
Length
12.7mm
Width
6.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.173394
$0.173394
10
$0.163579
$1.63579
100
$0.154320
$15.432
500
$0.145585
$72.7925
1000
$0.137344
$137.344
PBSS302PX,115 Product Details
PBSS302PX,115 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 230mV @ 255mA, 5.1A.Emitter base voltages of 5V can achieve high levels of efficiency.There is a transition frequency of 130MHz in the part.An input voltage of 20V volts is the breakdown voltage.The maximum collector current is 5.1A volts.
PBSS302PX,115 Features
the DC current gain for this device is 200 @ 2A 2V the vce saturation(Max) is 230mV @ 255mA, 5.1A the emitter base voltage is kept at 5V a transition frequency of 130MHz
PBSS302PX,115 Applications
There are a lot of Nexperia USA Inc. PBSS302PX,115 applications of single BJT transistors.