PBSS8510PA,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
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PBSS8510PA,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-PowerUDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin (Sn)
Max Power Dissipation
2.1W
Terminal Position
DUAL
Frequency
150MHz
Base Part Number
PBSS8510
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2.1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
5.2A
DC Current Gain (hFE) (Min) @ Ic, Vce
95 @ 2A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
340mV @ 260mA, 5.2A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
150MHz
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
6V
hFE Min
30
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.18000
$0.54
6,000
$0.17000
$1.02
15,000
$0.16500
$2.475
PBSS8510PA,115 Product Details
PBSS8510PA,115 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 95 @ 2A 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 340mV @ 260mA, 5.2A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Parts of this part have transition frequencies of 150MHz.There is a breakdown input voltage of 100V volts that it can take.Maximum collector currents can be below 5.2A volts.
PBSS8510PA,115 Features
the DC current gain for this device is 95 @ 2A 2V the vce saturation(Max) is 340mV @ 260mA, 5.2A the emitter base voltage is kept at 6V a transition frequency of 150MHz
PBSS8510PA,115 Applications
There are a lot of Nexperia USA Inc. PBSS8510PA,115 applications of single BJT transistors.