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PBSS8510PA,115

PBSS8510PA,115

PBSS8510PA,115

Nexperia USA Inc.

PBSS8510PA,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS8510PA,115 Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-PowerUDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation 2.1W
Terminal Position DUAL
Frequency 150MHz
Base Part Number PBSS8510
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 2.1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 5.2A
DC Current Gain (hFE) (Min) @ Ic, Vce 95 @ 2A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 340mV @ 260mA, 5.2A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 150MHz
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 6V
hFE Min 30
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.18000 $0.54
6,000 $0.17000 $1.02
15,000 $0.16500 $2.475
PBSS8510PA,115 Product Details

PBSS8510PA,115 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 95 @ 2A 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 340mV @ 260mA, 5.2A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Parts of this part have transition frequencies of 150MHz.There is a breakdown input voltage of 100V volts that it can take.Maximum collector currents can be below 5.2A volts.

PBSS8510PA,115 Features


the DC current gain for this device is 95 @ 2A 2V
the vce saturation(Max) is 340mV @ 260mA, 5.2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz

PBSS8510PA,115 Applications


There are a lot of Nexperia USA Inc. PBSS8510PA,115 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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