JANS2N3499L Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 30mA, 300mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Product comes in TO-5 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.Maximum collector currents can be below 500mA volts.
JANS2N3499L Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 6V
the supplier device package of TO-5
JANS2N3499L Applications
There are a lot of Microsemi Corporation JANS2N3499L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
