FP10R12KE3BOMA1 Description

FP10R12KE3BOMA1 is a 1200v IGBT-Modules. The FP10R12KE3BOMA1 can be applied in Automotive, Advanced driver assistance systems (ADAS), Enterprise systems, Datacenter & enterprise computing, Personal electronics, Home theater & entertainment, applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FP10R12KE3BOMA1 is in the tray package with 165W Power dissipation.

FP10R12KE3BOMA1 Features

Collector-emitter voltage Tvj = 25°C: 1200v

Continuous DC collector current TC = 25°C, Tvj max = 150°C: 15A

Repetitive peak collector current Tp = 1 ms: 20A

Total power dissipation Tc = 25°C: 55W

Gate-emitter peak voltage: ±20V

FP10R12KE3BOMA1 Applications

Industrial 

Factory automation & control 

Enterprise systems 

Enterprise machine 

Personal electronics 

Tablets