IGB01N120H2ATMA1

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Manufacturer part number:IGB01N120H2ATMA1

Manufacturer:Infineon Technologies

Description:IGB01N120H2ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IGB01N120H2ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	no
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Max Power Dissipation	28W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	28W
Transistor Application	SWITCHING
Halogen Free	Halogen Free
Polarity/Channel Type	NPN
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	3.2A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Test Condition	800V, 1A, 241 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 1A
Gate Charge	8.6nC
Current - Collector Pulsed (Icm)	3.5A
Td (on/off) @ 25°C	13ns/370ns
Switching Energy	140μJ
RoHS Status	ROHS3 Compliant