IKW15N120T2FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IKW15N120T2FKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2006
Series
TrenchStop®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
235W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Reverse Recovery Time
300ns
JEDEC-95 Code
TO-247AD
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
30A
Turn On Time
61 ns
Test Condition
600V, 15A, 41.8 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 15A
Turn Off Time-Nom (toff)
626 ns
IGBT Type
Trench
Gate Charge
93nC
Current - Collector Pulsed (Icm)
60A
Td (on/off) @ 25°C
32ns/362ns
Switching Energy
2.05mJ
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
240
$4.08271
$979.8504
IKW15N120T2FKSA1 Product Details
IKW15N120T2FKSA1 Description
IKW15N120T2FKSA1 is a type of IGBT with a soft, fast recovery anti-parallel emitter controlled diode, provided by Infineon Technologies, which is designed based on TrenchStop? technology. Based on the 2nd generation technology, it is able to provide very tight parameter distribution and high ruggedness, temperature stable behavior. Easy paralleling capability can be ensured due to the positive temperature coefficient.