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IXYP20N120C3

IXYP20N120C3

IXYP20N120C3

IXYS

IGBT Transistors GenX3 1200V XPT IGBT

SOT-23

IXYP20N120C3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series GenX3™, XPT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 278W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXY*20N120
Number of Elements 1
Element Configuration Single
Power Dissipation 278W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 40A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 4V
Turn On Time 60 ns
Test Condition 600V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 20A
Turn Off Time-Nom (toff) 220 ns
Gate Charge 53nC
Current - Collector Pulsed (Icm) 96A
Td (on/off) @ 25°C 20ns/90ns
Switching Energy 1.3mJ (on), 500μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Height 16mm
Length 10.66mm
Width 4.82mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
50 $4.32340 $216.17

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