IKD04N60RATMA1

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IKD04N60RATMA1

Manufacturer part number:IKD04N60RATMA1

Manufacturer:Infineon Technologies

Description:IKD04N60RATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IKD04N60RATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	TrenchStop™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	75W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	75W
Transistor Application	POWER CONTROL
Halogen Free	Halogen Free
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	8A
Reverse Recovery Time	43 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.1V
Max Breakdown Voltage	600V
Turn On Time	20 ns
Test Condition	400V, 4A, 43 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 4A
Turn Off Time-Nom (toff)	342 ns
IGBT Type	Trench Field Stop
Gate Charge	27nC
Current - Collector Pulsed (Icm)	12A
Td (on/off) @ 25°C	14ns/146ns
Switching Energy	90μJ (on), 150μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.7V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant