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IKW25N120H3FKSA1

IKW25N120H3FKSA1

IKW25N120H3FKSA1

Infineon Technologies

IKW25N120H3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKW25N120H3FKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Power - Max 326W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 290ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 50A
Turn On Time 61 ns
Test Condition 600V, 25A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 25A
Turn Off Time-Nom (toff) 397 ns
IGBT Type Trench Field Stop
Gate Charge 115nC
Current - Collector Pulsed (Icm) 100A
Td (on/off) @ 25°C 27ns/277ns
Switching Energy 2.65mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $11.805420 $11.80542
10 $11.137189 $111.37189
100 $10.506782 $1050.6782
500 $9.912058 $4956.029
1000 $9.350998 $9350.998
IKW25N120H3FKSA1 Product Details
IKW25N120H3FKSA1 Description


IKW25N120H3FKSA1 is a 1200 V IGBT equipped with an anti-parallel diode that is part of the TO-247 package. It has a diode that is free-wheeling within the TO-247 package that provides the ideal combination of switching and conduction losses. The main characteristic of this family is a MOSFET-like switch-off that results in low turn-off losses.


IKW25N120H3FKSA1 Features


Low switching and conduction losses
Very good EMI behavior
Can be used with a small gate resistor for reduced delay time and voltage overshoot
High current density
Best-in-class 1200 V IGBT efficiency and EMI behavior



IKW25N120H3FKSA1 Applications


Industrial Heating and Welding
Solutions for solar energy systems
Uninterruptible power supply

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