STGWT80V60F datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGWT80V60F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
32 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.756003g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
469W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGWT80
Element Configuration
Single
Input Type
Standard
Power - Max
469W
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
120A
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.85V
Test Condition
400V, 80A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 80A
IGBT Type
Trench Field Stop
Gate Charge
448nC
Current - Collector Pulsed (Icm)
240A
Td (on/off) @ 25°C
60ns/220ns
Switching Energy
1.8mJ (on), 1mJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.028000
$5.028
10
$4.743396
$47.43396
100
$4.474902
$447.4902
500
$4.221606
$2110.803
1000
$3.982647
$3982.647
STGWT80V60F Product Details
STGWT80V60F Description
This device is an IGBT developed using anadvanced proprietary trench gate field stopstructure. The device is part of the V series ofIGBTs, which represent an optimum compromisebetween conduction and switching losses tomaximize the efficiency of very high frequencyconverters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameterdistribution result in safer paralleling operation.