STGW35NB60SD

new-10%

Manufacturer part number:STGW35NB60SD

Manufacturer:STMicroelectronics

Description:STGW35NB60SD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGW35NB60SD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	200W
Current Rating	35A
Base Part Number	STGW35
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	200W
Input Type	Standard
Transistor Application	MOTOR CONTROL
Rise Time	70ns
Drain to Source Voltage (Vdss)	600V
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	70A
Reverse Recovery Time	44 ns
Continuous Drain Current (ID)	70A
JEDEC-95 Code	TO-247AA
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.7V
Max Breakdown Voltage	600V
Turn On Time	153 ns
Test Condition	480V, 20A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 20A
Turn Off Time-Nom (toff)	3600 ns
Gate Charge	83nC
Current - Collector Pulsed (Icm)	250A
Td (on/off) @ 25°C	92ns/1.1μs
Switching Energy	840μJ (on), 7.4mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Height	20.15mm
Length	15.75mm
Width	5.15mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free