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APT30GN60BDQ2G

APT30GN60BDQ2G

APT30GN60BDQ2G

Microsemi Corporation

IGBT 600V 63A 203W TO247

SOT-23

APT30GN60BDQ2G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 25 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 203W
Current Rating 63A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 63A
Collector Emitter Breakdown Voltage 600V
Turn On Time 26 ns
Test Condition 400V, 30A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A
Turn Off Time-Nom (toff) 255 ns
IGBT Type Trench Field Stop
Gate Charge 165nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 12ns/155ns
Switching Energy 525μJ (on), 700μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6.5V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
112 $4.91804 $550.82048

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