APT30GN60BDQ2G

new-10%

Manufacturer part number:APT30GN60BDQ2G

Manufacturer:Microsemi Corporation

Description:IGBT 600V 63A 203W TO247

Case Package:SOT-23

Datasheet:APT30GN60BDQ2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1999
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	203W
Current Rating	63A
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	63A
Collector Emitter Breakdown Voltage	600V
Turn On Time	26 ns
Test Condition	400V, 30A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 30A
Turn Off Time-Nom (toff)	255 ns
IGBT Type	Trench Field Stop
Gate Charge	165nC
Current - Collector Pulsed (Icm)	90A
Td (on/off) @ 25°C	12ns/155ns
Switching Energy	525μJ (on), 700μJ (off)
Gate-Emitter Voltage-Max	30V
Gate-Emitter Thr Voltage-Max	6.5V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free