IPD60R1K4C6ATMA1 Overview

Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 26 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 200pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 3.2A.Peak drain current for this device is 8A, which is its maximum pulsed drain current.This device supports dual supply voltages maximally powered by 600V.Using drive voltage (10V) reduces this device's overall power consumption.

IPD60R1K4C6ATMA1 Features

the avalanche energy rating (Eas) is 26 mJ
a continuous drain current (ID) of 3.2A
based on its rated peak drain current 8A.

IPD60R1K4C6ATMA1 Applications

There are a lot of Infineon Technologies
IPD60R1K4C6ATMA1 applications of single MOSFETs transistors.

• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification