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IPD60R1K4C6ATMA1

IPD60R1K4C6ATMA1

IPD60R1K4C6ATMA1

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.4 Ω @ 1.1A, 10V ±20V 200pF @ 100V 9.4nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

IPD60R1K4C6ATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™ C6
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 28.4W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4 Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 100V
Current - Continuous Drain (Id) @ 25°C 3.2A Tc
Gate Charge (Qg) (Max) @ Vgs 9.4nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 3.2A
Max Dual Supply Voltage 600V
Pulsed Drain Current-Max (IDM) 8A
Avalanche Energy Rating (Eas) 26 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.41822 $0.83644
5,000 $0.39245 $1.96225
12,500 $0.37957 $4.55484
25,000 $0.37254 $9.3135
IPD60R1K4C6ATMA1 Product Details

IPD60R1K4C6ATMA1 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 26 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 200pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 3.2A.Peak drain current for this device is 8A, which is its maximum pulsed drain current.This device supports dual supply voltages maximally powered by 600V.Using drive voltage (10V) reduces this device's overall power consumption.

IPD60R1K4C6ATMA1 Features


the avalanche energy rating (Eas) is 26 mJ
a continuous drain current (ID) of 3.2A
based on its rated peak drain current 8A.


IPD60R1K4C6ATMA1 Applications


There are a lot of Infineon Technologies
IPD60R1K4C6ATMA1 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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