SI2347DS-T1-GE3 Overview

A device's maximal input capacitance is 705pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 5A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 19 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -2.5V threshold voltage.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

SI2347DS-T1-GE3 Features

a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 19 ns
a threshold voltage of -2.5V
a 30V drain to source voltage (Vdss)

SI2347DS-T1-GE3 Applications

There are a lot of Vishay Siliconix
SI2347DS-T1-GE3 applications of single MOSFETs transistors.

• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples