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SI2347DS-T1-GE3

SI2347DS-T1-GE3

SI2347DS-T1-GE3

Vishay Siliconix

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 42m Ω @ 3.8A, 10V ±20V 705pF @ 15V 22nC @ 10V 30V TO-236-3, SC-59, SOT-23-3

SOT-23

SI2347DS-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET®
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.7W
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 42m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 705pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 6ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 5A
Threshold Voltage -2.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 0.042Ohm
Drain to Source Breakdown Voltage -30V
Max Junction Temperature (Tj) 150°C
Height 1.12mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.10400 $0.312
6,000 $0.09850 $0.591
15,000 $0.09025 $1.35375
30,000 $0.08475 $2.5425
75,000 $0.07650 $5.7375
SI2347DS-T1-GE3 Product Details

SI2347DS-T1-GE3 Overview


A device's maximal input capacitance is 705pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 5A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 19 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -2.5V threshold voltage.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

SI2347DS-T1-GE3 Features


a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 19 ns
a threshold voltage of -2.5V
a 30V drain to source voltage (Vdss)


SI2347DS-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI2347DS-T1-GE3 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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