BSZ096N10LS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
BSZ096N10LS5ATMA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
S-PDSO-N3
Operating Temperature (Min)
-55°C
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Transistor Application
SWITCHING
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (Abs) (ID)
11A
Drain-source On Resistance-Max
0.0096Ohm
Pulsed Drain Current-Max (IDM)
160A
DS Breakdown Voltage-Min
100V
Avalanche Energy Rating (Eas)
82 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
5,000
$0.73018
$3.6509
BSZ096N10LS5ATMA1 Product Details
BSZ096N10LS5ATMA1 Description
BSZ096N10LS5ATMA1 is an OptiMOSTM5 Power-Transistor. Infineon's OptiMOS? 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The BSZ096N10LS5ATMA1 low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.