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IPL65R310E6AUMA1

IPL65R310E6AUMA1

IPL65R310E6AUMA1

Infineon Technologies

MOSFET N-CH 4VSON

SOT-23

IPL65R310E6AUMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-PowerTSFN
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series CoolMOS™ E6
Part Status Obsolete
Moisture Sensitivity Level (MSL) 2A (4 Weeks)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 104W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 310m Ω @ 4.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 400μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 100V
Current - Continuous Drain (Id) @ 25°C 13.1A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 13.1A
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.31Ohm
Pulsed Drain Current-Max (IDM) 36A
Avalanche Energy Rating (Eas) 290 mJ
RoHS Status RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.514219 $1.514219
10 $1.428508 $14.28508
100 $1.347649 $134.7649
500 $1.271367 $635.6835
1000 $1.199403 $1199.403

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