IRG4BC10SD-LPBF Description
IRG4BC10SD-LPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which offers the highest efficiencies available. As a Generation 4 IGBT, it is able to offer the highest power density motor controls possible, tighter parameter distribution, and higher efficiency compared with Generation 3. The IRG4BC10SD-LPBF IGBT is co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations.
IRG4BC10SD-LPBF Features
Industry-standard TO-262 packages
Extremely tight Vce(on) distribution
Tighter parameter distribution
Highest efficiencies available
Higher efficiency
IRG4BC10SD-LPBF Applications
Industrial motor drive
Solar inverters
Welding
