BUP213 Description

  For a 600 V reverse voltage IGBT BUP213  , the wafer thickness required is about 100 microns, which is a huge technical challenge in manufacturing. To this end, the concept of the Treaty on the non-Proliferation of Nuclear weapons and its advantages have so far been limited to categories above 1000V. 100um Wafer-- A milestone towards 600V NPT-IGBT

BUP213 Features

· 1200V NPT technology

· positive temperature coefficient

· easy paralleling

BUP213 Applications

· drives