Name: IRG4PC30KDPBF
Brand: Infineon Technologies
SKU: IRG4PC30KDPBF
Availability: InStock

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IRG4PC30KDPBF

Manufacturer part number:IRG4PC30KDPBF

Manufacturer:Infineon Technologies

Description:IRG4PC30KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4PC30KDPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2000
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	100W
Current Rating	28A
Number of Elements	1
Element Configuration	Single
Power Dissipation	100W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	60 ns
Transistor Application	MOTOR CONTROL
Rise Time	42ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	160 ns
Collector Emitter Voltage (VCEO)	2.7V
Max Collector Current	28A
Reverse Recovery Time	42 ns
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.21V
Input Capacitance	920pF
Turn On Time	100 ns
Test Condition	480V, 16A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 16A
Turn Off Time-Nom (toff)	370 ns
Gate Charge	67nC
Current - Collector Pulsed (Icm)	58A
Td (on/off) @ 25°C	60ns/160ns
Switching Energy	600μJ (on), 580μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	120ns
Height	20.3mm
Length	15.875mm
Width	5.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free

IRG4PC30KDPBF Product Details

IRG4PC30KDPBF Description

IRG4PC30KDPBF belongs to the family of short circuit rated ultrafast IGBTs that are manufactured by Infineon Technologies to minimize switching losses and conduction losses. IGBT IRG4PC30KDPBF is co-packaged with HEXFRED? ultrafast, ultrasoft recovery antiparallel diodes to reduce noise, EMI, and switching losses. It combines the high input impedance of MOSFETs and the low on-state voltage drop of GTRs. Compared with the previous generation, it is characterized by tighter parameter distribution and higher efficiency.