IRG4PC30KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRG4PC30KDPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
38.000013g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2000
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
LOW CONDUCTION LOSS
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
100W
Current Rating
28A
Number of Elements
1
Element Configuration
Single
Power Dissipation
100W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
60 ns
Transistor Application
MOTOR CONTROL
Rise Time
42ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
160 ns
Collector Emitter Voltage (VCEO)
2.7V
Max Collector Current
28A
Reverse Recovery Time
42 ns
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.21V
Input Capacitance
920pF
Turn On Time
100 ns
Test Condition
480V, 16A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 16A
Turn Off Time-Nom (toff)
370 ns
Gate Charge
67nC
Current - Collector Pulsed (Icm)
58A
Td (on/off) @ 25°C
60ns/160ns
Switching Energy
600μJ (on), 580μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Fall Time-Max (tf)
120ns
Height
20.3mm
Length
15.875mm
Width
5.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.816240
$2.81624
10
$2.656830
$26.5683
100
$2.506444
$250.6444
500
$2.364569
$1182.2845
1000
$2.230726
$2230.726
IRG4PC30KDPBF Product Details
IRG4PC30KDPBF Description
IRG4PC30KDPBF belongs to the family of short circuit rated ultrafast IGBTs that are manufactured by Infineon Technologies to minimize switching losses and conduction losses. IGBT IRG4PC30KDPBF is co-packaged with HEXFRED? ultrafast, ultrasoft recovery antiparallel diodes to reduce noise, EMI, and switching losses. It combines the high input impedance of MOSFETs and the low on-state voltage drop of GTRs. Compared with the previous generation, it is characterized by tighter parameter distribution and higher efficiency.