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IRG4PC30KDPBF

IRG4PC30KDPBF

IRG4PC30KDPBF

Infineon Technologies

IRG4PC30KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4PC30KDPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 100W
Current Rating 28A
Number of Elements 1
Element Configuration Single
Power Dissipation 100W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 60 ns
Transistor Application MOTOR CONTROL
Rise Time 42ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 160 ns
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 28A
Reverse Recovery Time 42 ns
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.21V
Input Capacitance 920pF
Turn On Time 100 ns
Test Condition 480V, 16A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 16A
Turn Off Time-Nom (toff) 370 ns
Gate Charge 67nC
Current - Collector Pulsed (Icm) 58A
Td (on/off) @ 25°C 60ns/160ns
Switching Energy 600μJ (on), 580μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 120ns
Height 20.3mm
Length 15.875mm
Width 5.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.816240 $2.81624
10 $2.656830 $26.5683
100 $2.506444 $250.6444
500 $2.364569 $1182.2845
1000 $2.230726 $2230.726
IRG4PC30KDPBF Product Details

IRG4PC30KDPBF Description


IRG4PC30KDPBF belongs to the family of short circuit rated ultrafast IGBTs that are manufactured by Infineon Technologies to minimize switching losses and conduction losses. IGBT IRG4PC30KDPBF is co-packaged with HEXFRED? ultrafast, ultrasoft recovery antiparallel diodes to reduce noise, EMI, and switching losses. It combines the high input impedance of MOSFETs and the low on-state voltage drop of GTRs. Compared with the previous generation, it is characterized by tighter parameter distribution and higher efficiency.



IRG4PC30KDPBF Features


  • Tighter parameter distribution 

  • Higher efficiency

  • Low conduction losses

  • High switching speed

  • Available in the TO-247AC package



IRG4PC30KDPBF Applications


  • Rail transit

  • Smart grid

  • Aerospace

  • Electric vehicles 

  • New energy equipment


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