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IXGT15N120CD1

IXGT15N120CD1

IXGT15N120CD1

IXYS

Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(2+Tab) TO-268AA

SOT-23

IXGT15N120CD1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins 3
Weight 4.500005g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 150W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*15N120
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 150W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 30A
Reverse Recovery Time 40 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 43 ns
Test Condition 960V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.8V @ 15V, 15A
Turn Off Time-Nom (toff) 520 ns
Gate Charge 69nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 25ns/150ns
Switching Energy 1.05mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 190ns
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
30 $7.85667 $235.7001

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