IXGT15N120CD1

new-10%

Manufacturer part number:IXGT15N120CD1

Manufacturer:IXYS

Description:Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(2+Tab) TO-268AA

Case Package:SOT-23

Datasheet:IXGT15N120CD1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins	3
Weight	4.500005g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
JESD-609 Code	e0
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin/Lead (Sn/Pb)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	150W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*15N120
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	150W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	30A
Reverse Recovery Time	40 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	43 ns
Test Condition	960V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.8V @ 15V, 15A
Turn Off Time-Nom (toff)	520 ns
Gate Charge	69nC
Current - Collector Pulsed (Icm)	60A
Td (on/off) @ 25°C	25ns/150ns
Switching Energy	1.05mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	190ns
RoHS Status	ROHS3 Compliant