IRG4BC20SD-S

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Manufacturer part number:IRG4BC20SD-S

Manufacturer:Infineon Technologies

Description:IRG4BC20SD-S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4BC20SD-S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin/Lead (Sn/Pb)
Additional Feature	LOW CONDUCTION LOSS
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	225
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	60W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Reverse Recovery Time	37ns
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	19A
Turn On Time	99 ns
Test Condition	480V, 10A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.6V @ 15V, 10A
Turn Off Time-Nom (toff)	1780 ns
Gate Charge	27nC
Current - Collector Pulsed (Icm)	38A
Td (on/off) @ 25°C	62ns/690ns
Switching Energy	320μJ (on), 2.58mJ (off)
RoHS Status	Non-RoHS Compliant