IXGP12N60B

new-10%

Manufacturer part number:IXGP12N60B

Manufacturer:IXYS

Description:IGBT 600V 24A 100W TO220AB

Case Package:SOT-23

Datasheet:IXGP12N60B Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	2.299997g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2002
Series	HiPerFAST™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	100W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*12N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	100W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	24A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Turn On Time	40 ns
Test Condition	480V, 12A, 18 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 12A
Turn Off Time-Nom (toff)	400 ns
Gate Charge	32nC
Current - Collector Pulsed (Icm)	48A
Td (on/off) @ 25°C	20ns/150ns
Switching Energy	500μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	RoHS Compliant