IXSX50N60BU1

new-10%

Manufacturer part number:IXSX50N60BU1

Manufacturer:IXYS

Description:IGBT 600V 75A 300W PLUS247

Case Package:SOT-23

Datasheet:IXSX50N60BU1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	7.300002g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW SATURATION VOLTAGE
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	300W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXS*50N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	300W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	75A
Reverse Recovery Time	50 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	70 ns
Test Condition	480V, 50A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 50A
Turn Off Time-Nom (toff)	230 ns
Gate Charge	167nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	70ns/150ns
Switching Energy	3.3mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	8V
RoHS Status	RoHS Compliant