IXGH12N90C

new-10%

Manufacturer part number:IXGH12N90C

Manufacturer:IXYS

Description:IGBT 900V 24A 100W TO247AD

Case Package:SOT-23

Datasheet:IXGH12N90C Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Series	HiPerFAST™, Lightspeed™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	100W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	100W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	900V
Max Collector Current	24A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	900V
Turn On Time	40 ns
Test Condition	720V, 12A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 12A
Turn Off Time-Nom (toff)	350 ns
Gate Charge	33nC
Current - Collector Pulsed (Icm)	48A
Td (on/off) @ 25°C	20ns/135ns
Switching Energy	320μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	180ns
RoHS Status	ROHS3 Compliant