IRG4BC30W-STRL datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRG4BC30W-STRL Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
D2PAK
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
IRG4BC30W-S
Input Type
Standard
Power - Max
100W
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
23A
Test Condition
480V, 12A, 23Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 12A
Gate Charge
51nC
Current - Collector Pulsed (Icm)
92A
Td (on/off) @ 25°C
25ns/99ns
Switching Energy
130μJ (on), 130μJ (off)
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
800
$3.40583
$2724.664
IRG4BC30W-STRL Product Details
IRG4BC30W-STRL Description
IRG4BC30W-STRL is a 600V insulated gate bipolar transistor. The Infineon IRG4BC30W-STRL is designed for Switch-Mode Power Supply and PFC(power factor correction) applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4BC30W-STRL is in the TO-220AB package with 100W power dissipation.
IRG4BC30W-STRL Features
Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve the efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability