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IRG4BC30W-STRL

IRG4BC30W-STRL

IRG4BC30W-STRL

Infineon Technologies

IRG4BC30W-STRL datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC30W-STRL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number IRG4BC30W-S
Input Type Standard
Power - Max 100W
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 23A
Test Condition 480V, 12A, 23Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Gate Charge 51nC
Current - Collector Pulsed (Icm) 92A
Td (on/off) @ 25°C 25ns/99ns
Switching Energy 130μJ (on), 130μJ (off)
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
800 $3.40583 $2724.664
IRG4BC30W-STRL Product Details

IRG4BC30W-STRL Description


IRG4BC30W-STRL is a 600V insulated gate bipolar transistor. The Infineon IRG4BC30W-STRL is designed for Switch-Mode Power Supply and PFC(power factor correction)  applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4BC30W-STRL is in the TO-220AB package with 100W power dissipation.



IRG4BC30W-STRL Features


Designed expressly for Switch-Mode Power  Supply and PFC (power factor correction)  applications Industry-benchmark switching losses improve the efficiency of all power supply topologies

50% reduction of Eoff parameter

Low IGBT conduction losses

Latest-generation IGBT design and construction offers  tighter parameters distribution,  exceptional reliability



IRG4BC30W-STRL Applications


Communications equipment 

Broadband fixed line access 

Enterprise systems 

Datacenter & enterprise computing 

Personal electronics 

Portable electronics


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