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IRG4BC30W-STRL

IRG4BC30W-STRL

IRG4BC30W-STRL

Infineon Technologies

IRG4BC30W-STRL datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC30W-STRL Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 1997
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number IRG4BC30W-S
Input Type Standard
Power - Max 100W
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 23A
Test Condition 480V, 12A, 23Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Gate Charge51nC
Current - Collector Pulsed (Icm) 92A
Td (on/off) @ 25°C 25ns/99ns
Switching Energy 130μJ (on), 130μJ (off)
RoHS StatusNon-RoHS Compliant
In-Stock:3367 items

Pricing & Ordering

QuantityUnit PriceExt. Price
800$3.40583$2724.664

IRG4BC30W-STRL Product Details

IRG4BC30W-STRL Description


IRG4BC30W-STRL is a 600V insulated gate bipolar transistor. The Infineon IRG4BC30W-STRL is designed for Switch-Mode Power Supply and PFC(power factor correction) applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4BC30W-STRL is in the TO-220AB package with 100W power dissipation.



IRG4BC30W-STRL Features


Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve the efficiency of all power supply topologies

50% reduction of Eoff parameter

Low IGBT conduction losses

Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability



IRG4BC30W-STRL Applications


Communications equipment

Broadband fixed line access

Enterprise systems

Datacenter & enterprise computing

Personal electronics

Portable electronics


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