Name: STGD3NB60HDT4
Brand: STMicroelectronics
SKU: STGD3NB60HDT4
Availability: InStock

new-10%

STGD3NB60HDT4

Manufacturer part number:STGD3NB60HDT4

Manufacturer:STMicroelectronics

Description:STGD3NB60HDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGD3NB60HDT4 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	50W
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
Current Rating	6A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGD3
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Input Type	Standard
Power - Max	50W
Transistor Application	MOTOR CONTROL
Drain to Source Voltage (Vdss)	600V
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.8V
Max Collector Current	10A
Reverse Recovery Time	95 ns
Continuous Drain Current (ID)	6A
JEDEC-95 Code	TO-252AA
Collector Emitter Breakdown Voltage	600V
Turn On Time	25 ns
Test Condition	480V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 3A
Turn Off Time-Nom (toff)	168 ns
Gate Charge	21nC
Current - Collector Pulsed (Icm)	24A
Td (on/off) @ 25°C	5ns/53ns
Switching Energy	33μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STGD3NB60HDT4 Product Details

STGD3NB60HDT4 Description

STGD3NB60HDT4 belongs to an advanced family of IGBTs, the PowerMESH? IGBTs, designed utilizing the latest high voltage technology based on a patented strip layout. Based on its outstanding performance, it is able to achieve very high switching performances while maintaining a low voltage drop in high-frequency applications (up to 50kHz). It is available in the DPAK package in order to save board space.