STGD3NB60HDT4

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Manufacturer part number:STGD3NB60HDT4

Manufacturer:STMicroelectronics

Description:STGD3NB60HDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGD3NB60HDT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	50W
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
Current Rating	6A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGD3
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Input Type	Standard
Power - Max	50W
Transistor Application	MOTOR CONTROL
Drain to Source Voltage (Vdss)	600V
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.8V
Max Collector Current	10A
Reverse Recovery Time	95 ns
Continuous Drain Current (ID)	6A
JEDEC-95 Code	TO-252AA
Collector Emitter Breakdown Voltage	600V
Turn On Time	25 ns
Test Condition	480V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 3A
Turn Off Time-Nom (toff)	168 ns
Gate Charge	21nC
Current - Collector Pulsed (Icm)	24A
Td (on/off) @ 25°C	5ns/53ns
Switching Energy	33μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free