IRG4BC20SPBF Description

The IRG4BC20SPBF is an IGBT 600 V 19 A 60 W Through Hole TO-220AB. The BJT and MOSFET are combined to form the IGBT, or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.

IRG4BC20SPBF Features

• Industry standard TO-220AB package

• Lead-Free

• Standard: optimized for minimum saturation voltage and low operating frequencies (＜1kHz)

• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

• Generation 4 IGBTs offer highest efficiency available

• IGBTs optimized for specified application conditions

IRG4BC20SPBF Applications

• It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.

• It is used in UPS (Uninterruptible Power Supply) system.

• It is used in AC and DC motor drives offering speed control.

• It is used in chopper and inverters.

• It is used in solar inverters.