FGH40T65SH-F155 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGH40T65SH-F155 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
6.39g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2015
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
268W
Element Configuration
Single
Input Type
Standard
Power - Max
268W
Collector Emitter Voltage (VCEO)
2.1V
Max Collector Current
80A
Collector Emitter Breakdown Voltage
650V
Test Condition
400V, 40A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 40A
IGBT Type
Trench Field Stop
Gate Charge
72.2nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
19.2ns/65.6ns
Switching Energy
1.01mJ (on), 297μJ (off)
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
450
$2.84000
$1278
FGH40T65SH-F155 Product Details
FGH40T65SH-F155 Description
Using novel field stop IGBT technology, ON Semiconductor's new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applica-tions where low conduction and switching losses are essential. FGH40T65SH-F155 is a single IGBT from the manufacturer ON Semiconductor with the breakdown voltage of 650V.
FGH40T65SH-F155 Features
Maximum Junction Temperature : TJ = 175oC
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) = 1.6 V(Typ.) @ IC = 40 A