IRG4IBC20KDPBF

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Manufacturer part number:IRG4IBC20KDPBF

Manufacturer:Infineon Technologies

Description:IRG4IBC20KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4IBC20KDPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	2.299997g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	34W
Current Rating	11.5A
Number of Elements	1
Element Configuration	Single
Power Dissipation	34W
Case Connection	ISOLATED
Input Type	Standard
Transistor Application	POWER CONTROL
Rise Time	34ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.8V
Max Collector Current	11.5A
Reverse Recovery Time	37 ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.8V
Turn On Time	88 ns
Test Condition	480V, 9A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 9A
Turn Off Time-Nom (toff)	380 ns
Gate Charge	34nC
Current - Collector Pulsed (Icm)	23A
Td (on/off) @ 25°C	54ns/180ns
Switching Energy	340μJ (on), 300μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	110ns
Height	9.02mm
Length	10.67mm
Width	4.826mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free